Influence of Fast Thermal Treatment on the Electrophysical Properties of Silicon Dioxide

Abstract

The possibility of using fast thermal treatment for improving the electrophysical parameters of the gate dielectric obtained as a result of pyrogenic oxidation of silicon has been investigated. It is shown that such treatment of the gate dielectric allows one to reduce the voltage of the plane zones in it, the charge at the silicon–silicon dioxide interface, and the surface potential, as well as to raise the breakdown voltage of the dielectric and to reduce the leakage current in it.