Abstract
Amorphous InHfZnO (a-IHZO) thin-film devices have attracted considerable attention owing to their high mobility. However, the mobility of a-IHZO thin-film transistors has not been correctly determined, because it is affected by fast charging. In this letter, we investigated the effect of transient charging on the mobility. On the basis of the pulse IDS-VGS method, we present an approach to estimate a correction factor for the measured apparent mobility, which was extracted from pulse amplitude versus threshold voltage shift.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have