Abstract
The effect of fluorine and chlorine implantation on the solid-phase epitaxial regrowth of amorphized 〈100〉 Si was studied in intrinsic and heavily boron doped material. Annealings were performed at 500 and 600 °C. Both F and Cl retard the regrowth rate at 500 °C. The growth rates are much faster in B-doped than in undoped Si. Complete regrowth in B-doped Si is obtained for all investigated doses of fluorine up to 5×1015 F/cm2 at 600 °C for 30 min. The highest dose of chlorine (5×1015 Cl/cm2) stops the regrowth at this temperature.
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