Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

Abstract

Graphene has attracted attention because of its extraordinarily high mobility. However, procedures to extract mobility from graphene metal-oxide semiconductor transistors have not been systematically established because the accuracy of mobility value is affected by many extrinsic parameters. In this work, the influence of extrinsic parameters, such as contact resistance, transient charging effect, measurement temperature, and ambient on mobility are examined in order to provide a protocol capable of accurately assessing the mobility of graphene metal-oxide-semiconductor field effect transistors. Using a well controlled test protocol, the mobility of graphene is found to be temperature independent up to 450 K.