Abstract
In this paper, silicon nanowire (SiNW) arrays with the different structural parameters were prepared by the electroless metal assisted chemical etching method through changing the AgNO3 concentration in the etching solution and etching time. For the concentration of AgNO3 of 0.04M and the etching time of 8 min, the SiNW arrays with minimum reflectance were obtained. The average reflectivity of the SiNW arrays could be as low as 2.0% for the wavelength in the range of 300-1100nm. The measurements of reflectivity and morphology of SiNW arrays indicated that the reflectivity of SiNW arrays were not only sensitive to the length of the nanowires, but also dependent on the diameter, distribution period and the filling ratio of diameter to distribution period of the nanowires. When the filling ratio is around 0.45, the distribution period of the SiNW arrays is 110 ± 10nm, diameter is smaller and length is longer, the reflectivity will be lower. Keywords: Antireflection, metal-assisted chemical etching, morphology, silicon nanowire.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
