Influence of Environmental Conditions on Electrical Stability of Pentacene Thin-film Transistors with Cross-linked Poly(4-vinylphenol-co-methyl methacrylate) Gate Dielectric Layer

Jyothi Chintalapalli,Joel Ndikumana,Sungkeun Baang,Jaehoon Park

doi:10.18494/sam.2020.2776

Abstract

Influence of Environmental Conditions on Electrical Stability of Pentacene Thin-film Transistors with Cross-linked Poly(4-vinylphenol-co-methyl methacrylate) Gate Dielectric Layer

Highlights

Organic thin-film transistors (TFTs) have been extensively studied owing to their low-cost manufacturing process, processability at low temperatures, and mechanical flexibility, of which the latter allows them to be fabricated on plastic substrates
We studied the electrical stability of pentacene TFTs with cross-linked poly(4vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) as the gate dielectric in both ambient air and vacuum environments
The bias stress phenomena in top-contact pentacene TFTs with a cross-linked PVP-coPMMA gate dielectric layer were investigated in both air and vacuum

Summary

Introduction

Organic thin-film transistors (TFTs) have been extensively studied owing to their low-cost manufacturing process, processability at low temperatures, and mechanical flexibility, of which the latter allows them to be fabricated on plastic substrates. Jung et al reported that the increase in the drain current in air is due to the accumulation of extra charge carriers caused by the polarization of the insulator surface.[7] Backlund et al reported the ion-assisted modulation of the sourcedrain current of transistors.[8] a decrease in the drain current in air was reported and explained as having been caused by the capture of the charge carriers in the active channel by water molecules.[9] In addition, a shift in the threshold voltages under gate-bias stress has been reported, and various mechanisms have been proposed to explain it: charge trapping in the dielectric or semiconductor, deep trap states in both the contact and active channel regions, and migration of the mobile ions.(8−12) Taking into account the operation frequency of sensor circuits having a TFT amplifier and TFT switch, the electrical stability of TFTs is of prime importance for realizing high-performance sensors with fast signal processing and reliable sensing capabilities

Methods

Results

Conclusion