Influence of embedded indium nanocrystals on GaAs thermoelectric properties

Abstract

We have examined the formation of embedded In nanocrystals (NCs) and their influence on the free carrier concentration, resistivity, thermal conductivity, and Seebeck coefficient (S) of GaAs. The In nanocrystals enhance the free carrier concentration, while electron and phonon scattering at crystallite boundaries increases the resistivity and reduces the thermal conductivity. Furthermore, the room temperature Seebeck coefficient exhibits a 25% increase due to carrier trapping. Application of this approach to more heavily doped GaAs layers will likely lead to further increases in S and reductions in resistivity.