Influence of electronic correlations on the frequency‐dependent hopping transport in Si:P

Abstract

AbstractAt low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron‐electron interaction are appropriate to interpret the electric conductivity spectra.With a newly developed technique we have measured the complex broadband microwave conductivity of Si:P from 100 MHz to 5 GHz in a broad range of phosphorus concentration n /nc from 0.56 to 0.95 relative to the critical value nc = 3:5 × 1018 cm–3 corresponding to the metal‐insulator transition driven by doping.At our base temperature of T = 1.1 K the samples are in the zero‐phonon regime where they show a super‐linear frequency dependence of the conductivity indicating the influence of the Coulomb gap in the density of the impurity states. At higher doping n → nc , an abrupt drop in the conductivity power law σ1(ω) ∼ ωα is observed. The dielectric function ε1 increases upon doping following a power law in (1 – n /nc ). Dynamic response at elevated temperatures has also been investigated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)