Abstract
A complex temperature dependence of the introduction rate of E traps in the neutral and space-charge regions of Schottky diodes based on n-GaAs and subjected to high-energy irradiation was observed at 77–580 K in the situation where the recoil-atom energies were close to the threshold energies for radiation-defect production. The experimental data were interpreted quantitatively using a model of metastable Frenkel pairs. This model accounts for the processes of annihilation, recharging, and stabilization of a Frenkel pair in the material in relation to the electronic (charge) state of the Frenkel pair components; this state is governed by the position of the Fermi (quasi-Fermi) level and the sample temperature.
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