Influence of electron irradiation on characteristics of Si 1−xGe x p–n-structures

Abstract

Electrically active defects induced by irradiation with 4 MeV electrons and their influence on dynamic and static parameters of p–n-structures with bases on boron doped Si 1− x Ge x alloys (0< x⩽0.06) have been investigated. It has been found that after irradiation with the electron fluence Φ=2×10 14 cm −2 lifetime of minority charge carriers decreases more than 12 times and forward voltage increases twice. Deep level transient spectroscopy (DLTS) studies have shown that interstitial carbon atoms are dominant electrically active defects induced by the irradiation. These defects are transformed into the complexes “interstitial carbon—interstitial oxygen” upon annealing of irradiated samples in the temperature range 50–100 °C.