Abstract
Anodic memristors obtained by electrochemical anodization of Ta in phosphate, borate and citrate buffer solutions are studied. Memristive behaviour is demonstrated by electrical switching between high and low conductive states. The endurance and retention of devices are analysed. The use of phosphate leads to 4 switching levels and the highest ratio between high and low resistive states. All studied oxides are stoichiometric Ta2O5 and only P is detected inside anodic memristors. The improved memristive characteristics of oxides anodized in phosphate are attributed to an increase of O vacancies due to the presence of Ta oxyphosphate, which is believed to mediate spatial pinning of conductive filaments positions during read/write. The anodic memristors show high stability, enhanced endurance and retention that combined with their active layer low fabrication cost makes them ideal candidates for industrial implementation.
Highlights
Tantalum oxide-based memristors fabricated in a metal-insulatormetal (MIM) geometry, with Ta bottom electrode, Ta2O5 active layer and Pt top electrode have multiple applications
Throughout this study, all memristive devices analysed have a straightforward MIM structure defined by superimposed Pt/Ta2O5/Ta layers
The findings presented and discussed allow assuming that the electrochemical parameters during potentiodynam ical anodization directly influence the electrolyte species incorporation inside the anodic oxide, and permit tuning the device properties
Summary
Tantalum oxide-based memristors fabricated in a metal-insulatormetal (MIM) geometry, with Ta bottom electrode, Ta2O5 active layer and Pt top electrode have multiple applications They are essential in Resistive Random Access Memory (ReRAM) [1,2,3], sensors [4] or as building blocks for neural networks and neuromorphic applications [3,5,6]. The electrically induced resistive switching mechanism, be tween a high resistive state (HRS) and a low resistive state (LRS), is based on field and temperature-assisted ion migration. This leads to the formation of conductive paths in the insulating oxide layer, which coupled with local redox processes result in an overall resistance change [7].
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