Abstract
The effects of electric field intensity on the crystallization of amorphous silicon (a-Si) using the field-aided lateral crystallization (FALC) process have been studied in the range of 0–180 V∕cm. The crystallization velocity increases as the electric field intensity increases. Moreover, the better quality of polycrystalline silicon resulted in the films that crystallized faster. The activation energy of the metal-induced lateral crystallization process calculated from the Arrhenius plot is 1.79 eV (±0.03 eV), whereas that of the FALC process is 1.65 eV (±0.04 eV) regardless of the electric field intensities. It is also shown that the electric field affects both the enhancement of the preexponential factor in the Arrhenius equation and the decrease in the energy barrier height for the crystallization. In particular, the effect is almost the same in the temperature range of 400–500 °C. The increase in the crystallization velocity is attributed to the field-enhanced diffusion of copper ions in the Cu3Si crystallization mediator and the amorphous Si.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.