Abstract
For ZnSe crystals doped with Fe by a high-temperature diffusion technique, the influence of annealing time on the positions of strip-like areas with a high intensity of luminescence at wavelengths of 521 and 715 nm parallel to the doping surface is studied. It is found that the distance between the doping surface and the strip-like areas increases with increasing doping time. A good description of the results is obtained under the assumption of simultaneous diffusion of Fe ions and two different defect/impurity centers. The formation of spatial strip-like areas is shown to be a general phenomenon arising in the co-diffusion of several types of recombination centers.
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