Abstract
The effect of sensitivity inversion of magnetotransistors is studied using an instrument-technological simulation. The comparison of simulation results and experimental data enabled us to determine relations between sensitivity signs and distributions of injected charge carrier flows in structures of bipolar dual-collector lateral n-p-n magnetotransistors, the base of which is a diffused well (3CBMTBW). It is determined that the 3CBMTBW magnetotransistor with a small surface recombination velocity at the silicon-silicon dioxide boundary and with extraction of injected electrons by a base-well (substrate) p-n junction that is distant from the surface enables us to obtain a high sensitivity of 11 V/T at a good reproducibility and stability of parameters.
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