Abstract
Photoconductivity of doped amorphous diamond-like-carbon (a:DLC) films has not yet been studied because of strong recombination and short lifetime of excited free carriers. Obviously, high photoconductivity response of a:DLC films may lead to the development of photodevices based on this new material. The aim of this work was to investigate the influence of doping on the photoconductivity of a:DLC films. The a:DLC films were grown by the RF glow discharge technique using methane gas (CH/sub 4/), with iodine as doping element. The deposition was made on silicon and glass substrates. The photoconductivity effect was measured using collateral structures. The concentration and bonding energy of the doping elements in a:DLC films was determined using X-ray photoelectron spectroscopy (XPS). This study has shown that iodine doping increased the photoconductivity /spl sigma//sub ph/ and the decay time /spl tau//sub d/. The measured data have contributed new information about iodine neutralization of the dangling bonds, which increase the lifetime of free carriers in a:DLC.
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