Abstract
Electro-physical properties of CdTe:Mn crystals depending on doping method were studied. Three doping schemes were used: I - Mn was introduced to the melt of stoichiometric CdTe; II -- Cd, Mn and Te components were loaded according to the Cd 1-x Mn x Te solid solution; III -- Mn was introduced with loaded in stoichiometric proportions Cd and Te components. It was found that the properties of CdTe:Mn essentially depend on the method of impurity introduction. It may be caused by the difference of Mn atom position in CdTe lattice in different doping schemes and by the interaction of manganese atom with cadmium vacancy. For Cd 1-x Mn x Te (x = 0,02-0,30) solid solution crystals obtained according to scheme III a hysteresis type relaxation is observed in heating-cooling circles like that in p-CdTe crystals doped by Cu and Ag impurities.
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