Influence of Doping and Annealing on Structural, Optical and Electrical properties Amorphous ZnO Thin Films Prepared by PLD

Azhar Abdualwahab Ali,K.T Al-Rasoul,Issam M Ibrahim

doi:10.11591/ijeei.v3i1.129

Azhar Abdualwahab Ali, K.T Al-Rasoul + Show 1 more

Open Access

https://doi.org/10.11591/ijeei.v3i1.129

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Abstract

The optical gap of the films was calculated from the curve of absorption coefficient (αhע) 2 vs. hע and was found to be 3.8 eV at room temperature, and this value decreases from 3.8 to 3.58 eV with increasing of annealing temperature up to 473-673 K, and increases with the Ga doping. λ cutoff was calculated for ZnO and showed an increase with increasing annealing temperature and shifting to longer wavelength, while with doping the λ cutoff shifted to shorter wavelength. The photoluminescence (PL) results indicate that the pure ZnO thin films grown at room temperature show strong peaks at 640 nm , but GaO doped ZnO films showed a band emission in the yellow-green spectral region (380 to 450nm).

Highlights

Transparent conducting oxide (TCO) is very important in optoelectronic application, such as solar cell, sensor, and liquid crystal displays
ITO is used usually to be a transparent conducting film [3,4,5], but the cost of ITO is too high to reduce the price of products which have a TCO film
Table (2) shows the experiment and the standard peaks from International Centre for Diffraction Data [Card No ( # 96-901-1663 )] of ZnO thin film annealed at 473K and 673K

Summary

Introduction

Transparent conducting oxide (TCO) is very important in optoelectronic application, such as solar cell, sensor, and liquid crystal displays. The conductivity of ZnO without intentionally doping is not high enough as TCO films. ZnO films are fabricated by RF magnetron sputtering [18, 19], chemical vapor deposition [20], spray pyrolysis [21, 22] and sol–gel process [23, 24], etc. Among them, pulsed laser deposition [25] technique, metal-organic chemical vapour deposition (MOCVD) [26], arc plasma evaporation [27], dip-coating [28] and ion plating [29]. This outline provides a good context in which is pulsed laser deposition (PLD) can be viewed. The advantages of pulsed laser ablation are flexibility, fast response, energetic evaporants and congruent evaporation

Experimentation ZnO

Results and discussion

Conclusion