Influence of Dissipations in the Semiconductor Layers on the Properties of Hybrid Surface Waves at the Interface Between Porous Nanocomposite and Hypercrystal

Abstract

Dispersion properties of surface electromagnetic waves at the plane interface of nanocomposite made of semiconductor inclusions and a hypercrystal under different electron collision frequency and electron concentration are studied. Effective medium theory was applied in order to describe the principal permittivities of the contacting materials. The nanocomposite as well as the hypercrystal includes semiconductor layers made of n-InSb. Temperature models for concentration of charge carriers as well as mobility of charge carriers are applied to describe the physical properties of n-InSb material. On raising the temperature, the layers of n-InSb and, consequently, contacting composites, transform from a weakly dissipative materials to highly dissipative in the terahertz and optical frequencies. It is shown, that influence of dissipations in the semiconductor material results in the arising of additional surface waves branches, standard surface plasmon polaritons and Dyakonov surface waves, changes in frequency domains, angular existence domains, and penetration depth. Moreover, Dyakonov surface wave's branches can exist in the ranges where they are prohibited in the case of lossless materials.