Abstract
The influence of dislocation density on the I-V characteristics of InP diodes under reverse bias has been investigated. It is observed that the leakage current increases with increasing dislocation density whereas the breakdown voltage is reduced. Further, precipitates are observed on dislocations in the p-regions formed by the in-diffusion of Cd into n-type InP layers. It is argued that the increase in leakage current is due to the presence of space charge cylinders around dislocations threading the p-n junction. On the other hand, precipitates may be responsible for premature avalanche breakdown. In addition, for the range in energy scanned, levels within the bandgap due to dislocations are not observed by photoluminescence measurements.
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