Abstract

Thin films of polycrystalline AgInS2 were deposited on indium–tin oxide glass substrates by chemical bath deposition process. Various dipping cycles (1, 2, 3, 4 and 5) were taken into consideration. The influence of dipping cycle on structural, optical, electrical and photoelectrochemical characteristics of the AgInS2 thin films were investigated. The X-ray diffraction patterns indicated that all the samples revealed single phase of orthorhombic AgInS2 with polycrystalline structure. The thickness of samples in a range of 0.82–2.67μm analyzed by α-step instrument. The optical band gap of all AgInS2 films were 1.94eV calculated by transmittance spectra, respectively. All the samples revealed n-type semiconductor behaviors by Hall measurement. The carrier concentrations, mobility and resistivity of the AgInS2 films at room temperature were in the range of 1012–1015cm−3, 1.9–15cm2V−1s−1 and 103–105Ωcm, respectively. We found that the dipping 3 cycles AgInS2 film had a better photoelectrochemical performance with photocurrent density of 3.50mA/cm2 bias 0.5V vs. SCE reference electrode under a 300W Xe lamp illumination with the intensity of 100mW/cm2. This value was about 3 times higher than the dipping 5 cycles AgInS2 film. Observed higher photocurrent density was likely due to a suitable thickness, higher carrier mobility and lower charge transfer resistance.

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