Abstract
Composite titanium dioxide (TiO2) and zinc oxide (ZnO) thin films were deposited on indium tin oxide (ITO) substrates using sol-gel spin coating technique. The electrical and physical characterizations of three different sol-gel spin coating speed were investigated using two-probe current-voltage (I-V) measurement, field emission scanning electron microscopy (FESEM) and surface profiler (SP) respectively. The I-V measurement results showed the pinched hysteresis loop for every single of devices thus indicate that all the devices are memristive. ROFF/RON ratio which was defined from the hysteresis loop of device with higher spin speed was slightly higher compared to others.
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