Influence of different metal over-layers on the electrical behaviour of the MIS Schottky diodes

Abstract

We have employed technology computer-aided design – a Synopsys® tool to carry out a comparative study of the electrical behaviour of the metal–insulator–semiconductor Schottky diodes with different metal contacts (Ag, Au, Pt and Cr), on n-Si(100). We employed physics models to determine the Shockley–Read–Hall (SRH) and Auger recombination rates as a function of electric field profile in the depletion region. An insight was obtained as variation in the electric field at the metal–semiconductor interface due to work function variation affected the current mechanisms and recombination rates. The results were compared with the existing models. On the basis of analysis, merits and demerits of Schottky junctions formed due to these metals are discussed. The ideality factor of Au and Pt was found to be just around 2.0, while it was higher for Cr and Ag. However, the barrier height in the case of Cr was small, thus making it another possible metal layer for the Schottky contact. Similarly, SRH recombination rates were almost negligible for Au and Pt metal layer and became appreciable for Cr and much higher in Ag, making it not a good choice for the Schottky contact.