Abstract
Hydrogenated amorphous silicon films have been reactively sputtered with different flow rates of hydrogen in an ArH 2 gas mixture. The films have been characterized by optoelectronic and structural properties. The susceptibility to light induced changes has been studied. The effects of variation of the rf power density and the total pressure on the film properties have also been examined. Each of the deposition parameters have been found to exercise considerable control on the film characteristics. Parametric optimisation has yielded encouraging results in terms of film quality.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
