Influence of Different Buffer Layer on Intense Pulsed Field Emission of Carbon Nanotubes

Abstract

In order to study influence of buffer layer on intense pulsed field emission (IPFE) of carbon nanotube films (CNTs), CNTs were synthesized on Si substrate with different buffer by pyrolysis of iron phthalocyanine (FePc). The buffer layer including Ni and Au/Ni were prepared by using electroless plating process. The surface morphologies of the films were characterized by field emission scanning electron microscopy (SEM). IPFE properties of CNTs were measured with a diode structure in single-pulse mode. It was found that the emission ability of CNTs were improved obviously by introducing buffer layer,and Au were better than Ni as buffer layer. At the same peak electric field intensity ~11.4 V/µm, The even turn-on field decreased from 6.7V/µm for Si- CNTs to 5.9 V/µm for Ni- CNTs to 4.6V/µm for Au- CNTs (the CNTs synthesized on Si substrate with Au/Ni buffer,Ni buffer and without buffer was abbreviated as Au-CNTs , Ni- CNTs,Si-CNTs, respectively) , and the peak emission current increased from 90A for Si- CNTs to 180A for Ni- CNTs to 260A for Au- CNTs.