Abstract
The study of polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature T dep and Ar+ ion bombardment, on the (micro)hardness, H pl and elastic modulus, Y with respect to the film structure and microstructure. These mechanical characteristics were investigated by the depth sensing indentation (DSI) technique as the functions of relative indentation depth h rel = h max/t and the values obtained were compared with those obtained by the classical Vickers technique. Results of this study are described and discussed.
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