Abstract
The effects of temperature on the single-event upset (SEU) response of commercial and radiation-hardened SRAMs are investigated by experiment. The results showed that the SEU sensitivity relied on the temperature during the testing. However, it was also observed the amplitude of energy deposition of ions in sensitive volume of SRAM devices is able to affect the SEU sensitivity. When the deposited energy in sensitive volume is far larger than the critical value of inducing a SEU occurrence, the SEU sensitivity both in Bulk and SOI technologies displays a less temperature dependency. This result is attributed to the impact of energy deposition on the ion-induced transient pulse shape. The deposited energy in sensitive volume by different ions was estimated by Monte Carlo simulation and the role of energy deposition in transient pulse shape was discussed. The conclusion of detailed analysis is agreement with the results obtained in experiments.
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