Abstract

We have studied the influence of defects on silicon heterojunction solar cell efficiency by a method based on the comparison of electroluminescence (EL) image data with a finite element circuit model of solar cell efficiency. For this purpose, a general curve that relates the solar cell efficiency to a parameter representative of the defect strength, i.e., the loss of VOC, ∆VOC, from EL maps is obtained, and it is shown that the efficiency can be predicted with a good degree of confidence.

Highlights

  • The photovoltaic (PV) technology of silicon/thin hydrogenated amorphous (a-Si:H) silicon heterojunction (HJT) solar cells due to its high performance, low production cost, and simple structure has garnered large interest

  • We have studied the influence of defects on silicon heterojunction solar cell efficiency by a method based on the comparison of electroluminescence (EL) image data with a finite element circuit model of solar cell efficiency

  • Through a finite element circuit model (FEM), in which the overall solar cell is divided into small elements, we evaluate the I–V characteristics of the overall solar cell starting from maps of defectivity derived from EL images

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Summary

INTRODUCTION

The photovoltaic (PV) technology of silicon/thin hydrogenated amorphous (a-Si:H) silicon heterojunction (HJT) solar cells due to its high performance, low production cost, and simple structure has garnered large interest. In Ref. 9, a contactless PL method for detection of defects and for prediction of the fill factor and efficiency losses for HJT solar cells is presented. In this method, the acquisition of a unique PL image in opencircuit conditions and a coarse graining image treatment are combined, and a defectivity parameter, which quantifies the impact of defective areas on the average PL signal, is determined, and a correlation between efficiency and the defectivity parameter is shown. We show that EL maps of HJT solar cells, transformed into local open circuit voltage (VOC) maps, are univocally correlated with the solar cell efficiency. We compare the overall calculation with experimental ΔVoc maps derived from EL maps, and we find good agreement with the proposed model

EVALUATION OF ELECTROLUMINESCENCE IMAGES
PARALLEL DIODE NETWORK MODEL
RESULTS AND DISCUSSION
EL image data
Modeling of EL images
Comparison of EL modeling with experimental data
CONCLUSIONS

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