Abstract
The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented.
Highlights
Due to its unique material properties, silicon carbide (SiC) is very prospective material for fabrication of high power, high temperature electronic devices that can operate in harsh environment
One of the constraining factors in the fabrication of silicon carbide devices is the necessity of using high temperature of about 1800 ̊C - 2200 ̊C to introduce impurity by thermal diffusion
We report on the simplified model of lowtemperature diffusion of impurity in bulk SiC crystals, some experimental data on etching and influence of surface morphology on IV characteristics are presented
Summary
Due to its unique material properties, silicon carbide (SiC) is very prospective material for fabrication of high power, high temperature electronic devices that can operate in harsh environment. Boron concentration reached a high value to the 1020–21 cm–3 This technique has been demonstrated to be applicable to the fabrication of SiC devices [4], further work needs to be done to optimize the technique in order to improve the surface morphology and reduce crystalline defects and to improve p-n junction characteristics. To achieve these goals, further research of mechanism of low-temperature diffusion of boron is necessary. This paper, we report on the simplified model of lowtemperature diffusion of impurity in bulk SiC crystals, some experimental data on etching and influence of surface morphology on IV characteristics are presented
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