Abstract
The behavior of linear defects in p-type silicon (111) carrying a direct current of density 0−15×105 A/m2 in the [110] direction are studied in the temperature range T=850–1000 K during isothermal annealing. The regularities of change in the linear density and maximum path of dislocations in slip lines are revealed. A model of linear defects displacement in silicon single crystals in the field of internal stresses under an electric current is proposed. Matching theory with experimental data has made it possible to reveal the dependence of this distribution on the internal stresses relaxation time.
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