Abstract
The influence of chemical vapor deposition process parameters including carrier gas composition, deposition temperature, and content of reactants on the structure of graded SiC-C coating is discussed on the basis of thermodynamic calculation in this paper. The addition of enough hydrogen into carrier gas is necessary for the fabrication graded SiC-C coating. The increase of deposition temperature benefits the control of composition in graded coating but the concentration of free Si and free C becomes high at a too high deposition temperature. A high concentration of reactants is preferred while more defects are apt to exist in coatings if the concentration of reactants is too high. The optimum CVD process parameters for graded SiC-C coating are: gradually changing the molar ratio of SiCl4 and CH4 from 0 to 1 when the concentration of CH4 in hydrogen is 1-2 vol%, and the deposition temperature is 1200-1500 °C.
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