Abstract
Gate oxide films on silicon carbide (SiC) markedly affect the performance of SiC metal-oxide-semiconductor field effect transistors (MOSFETs). We used current-voltage (I–V) measurements to investigate the influence of curvature induced stress/strain on the breakdown electric field and the charge-to-breakdown (QBD) at SiO2/SiC, defined here as time-zero dielectric breakdown and time-dependent dielectric breakdown, respectively. The curvature of the epitaxy wafers was characterized by a thin film stress measurement system. The compression/tensile curvature decreased EBD and QBD during the dry thermal oxidation process. Furthermore, first-principle calculations suggested that the energy levels of the samples were related to the lattice constants of the SiC crystal, indicating that stress mainly affected the SiO2/SiC interface. We suggest that a “stress free” oxide film might be the best choice for SiC-MOSFET applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
