Abstract
ABSTRACTMetal sulphide CuS and CdS nanoparticles capped with Cetyltrimethylammonium bromide (CTAB) were synthesized by hydrothermal method. Structural, morphological, chemical composition, optical and luminescent properties were evaluated by different analytical techniques. X-ray diffraction (XRD) analysis of the CTAB capped metal sulfide nanoparticles reveals the formation of hexagonal structure. High-resolution transmission electron microscopy (HRTEM) images show that the morphology of the capped copper sulphide samples consists of hexagonal structure and capped cadmium has spherical shape and also confirms the crystalline nature of the particles with distinct lattice fringes. In FTIR spectroscopy, the composition of the CTAB capped CuS and CdS nanoparticles have been confirmed. The analysis of photoluminescence (PL) and optical transition show a red shift due to the reduction of band gap energy and it is attributed to the low defects and high crystallinity. The optical studies indicate that CuS and CdS nanoparticles with CTAB can be suitable for optoelectronic devices and photovoltaic applications.
Highlights
Semiconductor materials have been widely investigated due to their distinctive properties [1,2]
To ascertain the crystalline nature of Cetyltrimethylammonium bromide (CTAB) capped CuS and CdS nanocrystalline powders were explored by X-ray diffraction patterns shown in Figures 2 and 3
CuS and CdS nanoparticles capped with CTAB have been successfully synthesized using hydrothermal route
Summary
Semiconductor materials have been widely investigated due to their distinctive properties [1,2]. The synthesis of binary metal sulphide nanoparticles has been focused on II-VI [4] and I-VI [5] compounds, such as chalcogenides of cadmium and copper, as well as ZnS, HgS and MnS, on which a considerable degree of control upon their size and shape, and tunability of their optical and electronic properties has been achieved [6,7] These materials exhibit interesting properties for modern industrial applications. Among these materials, CdS and CuS are typical direct band gap semiconductors having a band gap of 2.4 eV and 2.5 eV respectively for the hexagonal wurtzite phase at room temperature.
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