Abstract
In this contribution the reflectance of thin films on semiconductor substrates with correlated randomly rough boundaries is analyzed. The theoretical approach is based on the scalar theory of diffraction of light. The numerical analysis of the reflectance is performed for rough thin films on GaAs and Si substrates. This analysis demonstrates that the reflectance depends not only on the rms values of the heights of the irregularities of the boundary roughness but it also depends on values of cross‐correlation coefficients between the rough boundaries. The magnitudes of boundary roughness and cross‐correlation between the rough boundaries depend on the technological procedures of creating thin film systems. By interpreting the measured reflectance spectra, the values of optical and roughness parameters can be determined.
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