Abstract
AbstractThe existence of cracks in silicon solar cells can drastically reduce the electrical performance of an individual cell and even of an entire photovoltaic module. An in‐depth understanding of the influence of cracks on solar cells enables therefore calculations of the crack impact and other following effects on module level. This paper shows a detailed analysis of the electrical influence of cracks with two different spatially resolved methods including global and local current–voltage characteristics. The main influence of cracks is an increased recombination current density in the depletion region, which is clearly shown by spatially resolved dark lock‐in thermography measurements with local current–voltage investigation. This increased recombination current density affects further cell parameters such as the efficiency, which is confirmed also by the global current–voltage characteristics. The additionally used ratio image technique based on electroluminescence measurements is in comparison with the local current–voltage method, the more reliable and faster method for the crack detection itself, and allows on cell‐level and module‐level a continuous inspection of cracks. Copyright © 2013 John Wiley & Sons, Ltd.
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