Abstract
Correlation between nc-Si, Er3+ and nonradiative defects in Er-doped nc-Si/SiO2 films is studied. Upon the 514.5 nm laser excitation, the samples exhibit a nanocrystal-related spectrum centered at around 750 nm and an Er3+ luminescence line at 154μm. With increasing Er3+ content in the films,the Er3+ emission becomes intense while the photoluminescence at 750 nm decreases. Hydrogen passivation of the samples is shown to result in increases of the two luminescence peaks. However, the effect of hydrogen treatment is different for the samples annealed at different temperatures. The experimental results show that the coupling between Er3+, nc-Si and nonradiative centers has a great influence on photoluminescence from nc-Si/SiO2 films.
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