Abstract
The optoelectronic properties of oxygen, copper and chlorine doped CdTe thin films are being investigated. It is found that Cu co-dopant increases the p-type resistivity of CdTe:Cl films up to some orders of magnitude whereas, oxygen co-dopant increases the resitivity of CdTe:Cl:Cu films up to some orders of magnitude, and increases the quantity of liquid phase at thermal treatments. It is thought that Cu complexes, with oxygen and the isoelectronic complex defects V Cl2Cl Te, can limit the efficiency of CdS/CdTe solar cells.
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