Abstract
The short-time growth behavior of (Al, Ga)As active layers grown by the liquid phase epitaxy equilibrium (or ramp) cooling technique is reported as a function of time and cooling rate. At slow cooling rates, the initial growth behavior is dominated by a “flow” mechanism as a result of movement by the substrate slider relative to the melt and driven by supersaturation. Near a cooling rate of 0.2°C/min, we observe an apparent change in growth mechanism to one which is consistent with a surface reaction limited process.
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