Abstract
Liquid phase electroepitaxy (LPEE) — the method of current controlled layer growth from a solution at constant temperature — was used to grow thick GaAlAs layers on GaAs substrates. We have shown that in the presence of convection in the solution, compositionally uniform layers can be grown despite compositional nonuniformity of the source material used. Layers grown in the absence of convection had an Al content which increased with thickness. This reflects the composition profile of the source material prepared by the cooling down of the system.
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