Influence of contact resistance on the electrical characteristics of organic static induction transistors

Abstract

The influencing factors on the current–voltage (I–V) characteristics of organic static induction transistors (OSITs) are complicated and usually the underneath physical mechanism depends on many parameters. In this paper, firstly we come up with a typical OSIT model and summarize its theoretical equations to the I–V curves of pentacene-based OSIT ITO(Source)/Pentacene/ Al(Gate)/Pentacene/Au(Drain) under both negative drain–source voltage and gate voltage (VG), and the influence of contact resistance on OSITs is investigated. Our simulation showed that the injection barriers, the depletion layer and the gate controlling reduce when OSIT approaches the space-charge-limited current mode by decreasing the negative VG, which confirms our previous supposal that the contact resistance at the interfaces of Al inter-gate electrode and at the two injection electrodes reduces after keeping the device for a long-enough time. Also, our simulating equations can be applied to other organic based OSITs under positive both VDS and VG.