Abstract
The optical gap and electrical resistivity of a series of Ge 20Bi x Se 80− x glasses ( x=0, 5, 9 10, 15, 20, 25) was measured. In order to determine the optical gap, E g , the absorption spectra of films with different Bi content, (denoted by x), were analyzed. The optical band gap showed a sharp decrease from 2.1 to 1.65 eV as the Bi content increased to 10 at.%. A slight change was observed for Bi >10 at.%. The electrical activation energy of the films was determined by investigating the temperature dependence of resistivity. A large decrease in the electrical activation energy from 0.97 to 0.09 eV was observed as the Bi content was increased up to 10 at.%. The optical and electrical data suggest that the addition of Bi produces localized states near the conduction band edge so the electrical transport is due to the hopping of electrons after being excited into localized states at the conduction band edge.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
