Abstract
We have fabricated self-organized InAs/GaAs quantum dots (QDs) capped by 1 nm In 0.2Al 0.8As and 5 nm In 0.2Ga 0.8As strain-reducing layer (SRL). The luminescence emission at a long wavelength of 1.33 μm with narrower half width is realized. A wider energy separation between the ground and first excited radiative transitions of up to 102 meV was observed at room temperature. Furthermore, the comparative study proves that luminescence properties of InAs/GaAs QDs overgrown with combined InAlAs and InGaAs SRLs are much better than that of one capped with InGaAs or InAlAs SRL.
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