Abstract
We studied the correlation between magnetoresistance (MR) effects and the type of conductivity in paramagnetic Ga 1-x Mn x As with x < 0.5%. Series of samples of (Ga,Mn)As with different codoping levels of Te have been prepared by metal-organic vapor-phase epitaxy (MOVPE). With increasing Mn-content from doping levels to x = 0.5% in paramagnetic Ga 1-x Mn x As, the MR at 1.6K changes continuously from positive to strongly negative. This manifests the complex interplay between p-d exchange induced valence band splitting and the metal-insulator transition. Codoping with Te leads eventually to a dominant conduction band transport. It is characterized by a small negative contribution at low magnetic fields to the parabolic MR similar to that found in highly n-doped diamagnetic semiconductors. It shows that the Mn-induced conduction band splitting is much smaller than the valence band splitting, i.e., |N 0 α| << |N 0 β|.
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