Abstract
In paper the influence of parameters of inductively coupled chloropentafluoroethane plasma on the rate and characteristics of gallium arsenide etching was studied. Etched GaAs profiles by white light interferometry and scanning electron microscopy were investigated. It turned out that the process rate does not depend on freon flow, but forward and inductive power, as well as pressure determined. In this case, when the power of the plasma generator increase, the surface morphology changes significantly, that manifests itself in roughness increase and the detection of defects on GaAs and mask. Carrying out a process at low pressure leads to the deposition of single large inhomogeneities on the substrate. The transition from pulsed to continuous etching is accompanied by deterioration in the anisotropy of a process due to the polymer layer deposition on side walls. Keywords: chloropentafluoroethane, plasma-chemical etching, inductively coupled plasma, gallium arsenide.
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