Abstract
A thin layer of SU-8 submicron pattern produced by holographic lithography is used as the dry etch mask in a chemically assisted ion beam etching (CAIBE) system. The effect of the chlorine gas flow rate on etched sidewalls is investigated; by matching the lateral etch rate and the deposition rate, etching selectivity of up to 7:1 is achieved, rendering smooth vertical sidewalls and damage-free upper portions for the etched structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.