Abstract
The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology. Keywords: thyristors, blocking voltage, sulfide passivation, gallium arsenide, mesastructure.
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