Abstract
The CdxZn1−xS thin films were prepared by chemical bath deposition in a solution containing cadmium chloride, zinc chloride, thiourea, sodium citrate and ammonia. It was found CdxZn1−xS thin films could be successfully prepared at different CdCl2 concentrations from 0.04M to 0.01M. The morphological, structural, optical properties of CdxZn1−xS films fabricated by different Cd source concentrations were investigated by XRD, SEM and UV–vis-NIR spectroscopy, respectively. The CdxZn1−xS films prepared at 0.03M and 0.02M CdCl2 showed uniform, dense surface morphology and good crystallinity. With the concentration of CdCl2 in solution decreasing from 0.04M to 0.01M, the zinc content increased. Accordingly, the optical band gap increased from 2.45eV to 3.07eV. The photo-current response properties were mainly discussed. All the films showed obvious photoconductive phenomenon. The CdxZn1−xS film prepared at 0.02M CdCl2 showed a best photo-current response, which presented fastest raise-up and fall-down photo-current when the light was turned on and off.
Published Version
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