Abstract
For a bulk GaAs semiconductor laser amplifier the evolution of the optical gain after a 200 fs pulse excitation is calculated by including carrier–carrier and LO-phonon–carrier scattering in terms of the Boltzmann collision integrals. For an injected light pulse in the gain (absorption) region the optical gain shows a transient decrease (increase) followed by relaxation towards a lower (higher) level. Around the transparency point the broadening of the optical transition due to the decay of the induced interband polarization yields a transient decrease of the optical gain although the carrier density does not change. This behavior agrees qualitatively well with measurements of M. P. Kesler and E. P. Ippen [Appl. Phys. Lett. 51, 1765 (1987)]. The temperature relaxation after the excitation is examined.
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