Abstract

The polarization properties of the light generated by vertical cavity surface emitting semiconductor lasers are described by means of two different sets of equations, derived, respectively, from a class-$A$ and a class-$B$ approach. We compare the polarization eigenmodes and their stability for arbitrary linear phase anisotropy and pump rates. Inclusion of spontaneous emission noise in the field equations is shown to lead to hopping between the polarized eigenmodes in both cases. By studying both class-$A$ and class-$B$ systems we obtain physical insight into the influence of carrier dynamics on polarization stability and noise-induced polarization hopping.

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