Abstract
The intrinsic response time τi of semiconductor avalanches has been determined from microwave measurements on Si, Ge, and GaAs IMPATT diodes of various structures (n+-p, p+-n, Schottky barrier). A theory has been developed to calculate τi for these diodes. It was found that the effect of carrier diffusion has to be taken into account to remove a systematic discrepancy between experimental and theoretical values of τi. For Si the value of the average high-field diffusion constant D̄=80 cm2/sec for E=400 kV/cm, taken from the literature, could be used satisfactorily. For Ge and GaAs, where no information on D̄ is available, D̄=100 cm2/sec for E=200 kV/cm and D̄=250 cm2/sec for E=400 kV/cm, respectively, had to be chosen to explain the experimental values of τi.
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