Abstract
This paper presents an influence of the electric field dependence of the diffusion coefficient of electrons (D(E) relation) on a formation of a stable domain at an anode contact in a transferred electron device. The stable domain (anode trapped domain) has been observed in a planar Gunn device experimentally, and it has been shown that a large trigger voltage is needed to launch a new domain if a preceding domain has been trapped. Computer simulations have been carried out in order to find a condition to form the trapped domain. Various D(E) relations of GaAs presented by many authors have been adopted to the simulation, and it is shown that one of these D(E) relations is suitable to describe the dynamic behaviors of electrons in GaAs. Simulated results have indicated that the trapped domain occurs in a certain range of doping density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
